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Pin Out Diagram - Style A
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Back to Laser Diodes | |||
INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)
TECHNICAL
DATA for LASER DIODE
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| Infrared light output | 840nm |
Pin Out Diagram - Style A |
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| Optical power output | 5mW CW | ||||||
| Package Type | 5.6mm | ||||||
| Built-in photo diode for monitoring laser output | |||||||
| Items |
Symbols |
Values |
Unit |
| Optical output power |
Po |
5 |
mW |
| Laser diode reverse voltage |
VLDR |
2 |
V |
| Photo diode reverse voltage |
VPDR |
30 |
V |
| Operating temperature |
Topr |
-10 ~ +40 |
°C |
| Storage temperature |
Tstg |
-40 ~ +85 |
°C |
| OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) |
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Items |
Symbols |
Min. |
Typ. |
Max. |
Unit |
Test Condition |
| Optical output power |
Po |
- |
5 |
- |
mW |
- |
| Threshold current |
Ith |
10 |
20 |
35 |
mA |
- |
| Operating current |
Iop |
15 |
25 |
45 |
mA |
Po=5mW |
| Operating voltage |
Vop |
2.0 |
2.4 |
2.7 |
V |
Po=5mW |
| Lasing wavelength |
8 D |
830 |
840 |
850 |
nm |
Po=5mW |
| Beam divergence |
q F |
8 |
10 |
11 |
deg |
Po=5mW |
| Beam divergence |
q z |
25 |
31 |
40 |
deg |
Po=5mW |
| Slope Efficiency (mW/mA) |
0 |
0.4 |
0.5 |
0.7 |
- |
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| Monitor current |
Im |
10 |
100 |
200 |
m A |
Po=5mW,Vr=5V |
| Astigmatism |
As |
- |
11 |
- |
m m |
Po=5mW |
| MTTF | 3000-5,000 hrs. |
Po=5mW,NA=0.4 |
| Emitter Size | 1 x 4 Microns |
| Emitter Distance to Cap Lens | 0.3mm |
| Structure | Index Guided |