US-Lasers: 840nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module

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Barrel Specs:

2 Pieces
12 - 56 Thread Size
Dia: 6.4mm
Length: 17mm

Weight & Wire Lengths:

Module with 6" wire leads - 49 grain wt.b
Module without 6" wire leads - 42 grain wt
Module with spring leads - 42 1/2 grain wt.
Spring 2.4mm dia. 4mm long (trimmable)

Lens Housing Specs:

12 - 56 Thread Size
3.0mm Aperture
4.0mm Plastic Lens

INFRARED DIODE LASER DATA SHEET ABSOLUTE MAXIMUM RATINGS - (Tc=25 蚓)

TECHNICAL DATA for LASER DIODE

Index Guided MQW Structure

Wavelength: 840nm (Typ.)

Optical Power: 5mW CW

Threshold Current: 20mA (Typ.)

Standard Package: 5.6mm

Infrared light output

840nm

Pin Out Diagram - Style A

Optical power output

5mW CW

Package Type

5.6mm

Built-in photo diode for monitoring laser output

Items	Symbols	Values	Unit
Optical output power	Po	5	mW
Laser diode reverse voltage	VLDR	2	V
Photo diode reverse voltage	VPDR	30	V
Operating temperature	Topr	-10 ~ +40	蚓
Storage temperature	Tstg	-40 ~ +85	蚓

OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 慢)

Items	Symbols	Min.	Typ.	Max.	Unit	Test Condition
Optical output power	Po	-	5	-	mW	-
Threshold current	Ith	10	20	35	mA	-
Operating current	Iop	15	25	45	mA	Po=5mW
Operating voltage	Vop	2.0	2.4	2.7	V	Po=5mW
Lasing wavelength	8 D	830	840	850	nm	Po=5mW
Beam divergence	q F	8	10	11	deg	Po=5mW
Beam divergence	q z	25	31	40	deg	Po=5mW
Slope Efficiency (mW/mA)	0	0.4	0.5	0.7		-
Monitor current	Im	10	100	200	m A	Po=5mW,Vr=5V
Astigmatism	As	-	11	-	m m	Po=5mW
MTTF			3000-5,000 hrs.			Po=5mW,NA=0.4

Emitter Size	1 x 4 Microns
Emitter Distance to Cap Lens	0.3mm
Structure	Index Guided