US-Lasers: 780nm-5mW - Infrared Laser Diodes

 

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INFRARED DIODE LASER DATA SHEETS          ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA
  • Index Guided MQW Structure
  • Wavelength: 780nm (Typ.)
  • Optical Power: 5mW CW
  • Threshold Current: 25mA (Typ.)
  • Standard Package: 5.6mm

Infrared light output      780nm

Pin Out Diagram - Style A
Optical power output   5mW CW
Package Type             5.6mm
Built-in photo diode for monitoring laser output
Items

Symbols

Values

Unit
Optical output power

Po

5

mW
Laser diode reverse voltage

VLDR

2

V
Photo diode reverse voltage

VPDR

30

V
Operating temperature

Topr

-10 ~ +40

°C
Storage temperature

Tstg

-40 ~ +85

°C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)

Items

Symbols

Min.

Typ.

Max.

Unit

Test Condition
Optical output power

Po

-

5

-

mW

-
Threshold current

Ith

15

25

40

mA

-
Operating current

Iop

25

35

50

mA

Po=5mW
Operating voltage

Vop

1.9

2.1

2.5

V

Po=5mW
Lasing wavelength

8 D

770

780

790

nm

Po=5mW
Beam divergence

q F

8

11

15

deg

Po=5mW
Beam divergence

q z

20

35

45

deg

Po=5mW
Slope Efficiency (mW/mA)

0

0.1

0.3

0.6

-
Monitor current

Im

100

200

600

m A

Po=5mW,Vr=5V
Astigmatism

As

-

11

-

m m

Po=5mW
MTTF

3000-5,000 hrs.

Po=5mW,NA=0.4
Emitter Size 1 x 4 Microns
Emitter Distance to Cap Lens 0.3mm
Structure  Index Guided