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TECHNICAL DATA for LASER MODULE | ||
Barrel Specs:
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Collect Specs:
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Lens Housing Specs:
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INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)
TECHNICAL
DATA for LASER DIODE
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Infrared light output | 840nm |
Pin Out Diagram - Style A |
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Optical power output | 10mW CW | ||||||
Package Type | 9mm | ||||||
Built-in photo diode for monitoring laser output |
Items |
Symbols |
Values |
Unit |
Optical output power |
Po |
10 |
mW |
Laser diode reverse voltage |
VLDR |
2 |
V |
Photo diode reverse voltage |
VPDR |
30 |
V |
Operating temperature |
Topr |
-10 ~ +40 |
°C |
Storage temperature |
Tstg |
-40 ~ +85 |
°C |
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) |
Items |
Min. |
Typ. |
Max. |
Unit |
Test Condition |
Optical output power |
- |
10 |
- |
mW |
- |
Threshold current |
15 |
25 |
40 |
mA |
- |
Operating current |
30 |
40 |
60 |
mA |
Po=10mW |
Operating voltage |
2.0 |
2.4 |
2.7 |
V |
Po=10mW |
Lasing wavelength |
830 |
840 |
850 |
nm |
Po=10mW |
Beam divergence |
8 |
10 |
11 |
deg |
Po=10mW |
Beam divergence |
25 |
31 |
40 |
deg |
Po=10mW |
Slope Efficiency (mW/mA) |
0.4 |
0.5 |
0.7 |
- |
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Monitor current |
10 |
30 |
90 |
m A |
Po=10mW,Vr=5V |
Astigmatism |
- |
11 |
- |
m m |
Po=10mW |
MTTF | 3000-5,000 hrs. |
Po=10mW,NA=0.4 |
Emitter Size | 1 x 4 Microns |
Emitter Distance to Cap Lens | 0.3mm |
Structure | Index Guided |