US-Lasers: 808nm-10mW - Infrared Laser Diode and Infrared Diode Laser Module

 

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TECHNICAL DATA for LASER MODULE
Barrel Specs:
  • 3/8 - 56 Thread Size
  • Dia: 10.4mm
  • Length:  17mm
 Collect Specs:
  • 3/8 - 56 Thread Size
  • 4.3mm Aperature
  • Half Hard Brassbbb
  Lens Housing Specs:
  • 3/8 - 56 Thread Size
  • 3.7mm Aperture
  • 7mm Plastic Lens

INFRARED LASER DIODE DATA SHEETS           ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA for LASER DIODE
  • Index Guided MQW Structure
  • Wavelength: 808nm (Typ.)
  • Optical Power: 10mW CW
  • Threshold Current: 25mA (Typ.)
  • Standard Package: 9mm

Infrared light output      808nm

Pin Out Diagram - Style A
Optical power output   10mW CW
Package Type             9mm
Built-in photo diode for monitoring laser output
Items

Symbols

Values

Unit
Optical output power

Po

10

mW
Laser diode reverse voltage

VLDR

2

V
Photo diode reverse voltage

VPDR

30

V
Operating temperature

Topr

-10 ~ +40

°C
Storage temperature

Tstg

-40 ~ +85

°C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)

Items

Symbols

Min.

Typ.

Max.

Unit

Test Condition
Optical output power

Po

-

10

-

mW

-
Threshold current

Ith

15

25

40

mA

-
Operating current

Iop

30

40

60

mA

Po=10mW
Operating voltage

Vop

2.0

2.4

2.7

V

Po=10mW
Lasing wavelength

8 D

800

808

820

nm

Po=10mW
Beam divergence

q F

8

10

11

deg

Po=10mW
Beam divergence

q z

25

31

40

deg

Po=10mW
Slope Efficiency (mW/mA)

0

0.4

0.5

0.7

-
Monitor current

Im

10

30

90

m A

Po=10mW,Vr=5V
Astigmatism

As

-

11

-

m m

Po=10mW
MTTF

3-5,000 hrs.

Po=10mW,NA=0.4
Emitter Size 1 x 40 Microns
Emitter Distance to Cap Lens 0.3mm
Structure  Index Guided