US-Lasers: 780nm-30mW - Infrared Laser Diodes
TECHNICAL DATA for LASER MODULE | ||
Barrel Specs:
|
Collect Specs:
|
Lens Housing Specs:
|
IR LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)
|
|
Items | Symbols | Values | Unit |
Optical output power | Po | 30 | mW |
Laser diode reverse voltage | V | 2 | V |
Photo diode reverse voltage | V | 30 | V |
Operating temperature | Topr | -10 ~ +50 | °C |
Storage temperature | Tstg | -40 ~ +85 | °C |
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) |
Items | Symbols | Min. | Typ. | Max. | Unit | Test Condition |
Optical output power | Po | - | 30 | - | mW | - |
Threshold current | Ith | 25 | 40 | 60 | mA | Po=30mW |
Operating current | Iop | 40 | 60 | 80 | mA | Po=30mW |
Operating voltage | Vop | 2.0 | 2.2 | 2.7 | V | Po=30mW |
Lasing wavelength | 770 | 780 | 790 | nm | Po=30mW | |
Beam divergence | || (º) | 8 | 10 | 11 | deg | Po=30mW |
Beam divergence | 25 | 31 | 40 | deg | Po=30mW | |
Monitor current | Im | 100 | 300 | 500 | uA | Po=30mW |
Astigmatism | As | - | 11 | - | um | Po=30mW |
Slope Efficiency (mW/mA) | 0.3 | 0.4 | 0.7 | Po=30mW | ||
MTTF | 10000 hrs. | Po=30mW |
Emitter Size | 10 x 60 Microns - Emitter Distance to Cap Lens = 0.3mm |
Structure | Index Guided |