US-Lasers: 904nm-30mW - Infrared Laser Diode

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IR LASER DIODE DATA SHEET           ABSOLUTE MAXIMUM RATINGS - (Tc=25 C)

TECHNICAL DATA
IR light output       904nm
Optical power output  30mW CW
Package Type             5.6mm
Built-in photo diode for monitoring laser output
Pin Out Diagram
Items Symbols Values Unit
Optical output power Po 30 mW
Laser diode reverse voltage V 2 V
Photo diode reverse voltage V 30 V
Operating temperature Topr -10 ~ +50 C
Storage temperature Tstg -40 ~ +85 C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 C)
Items Symbols Min. Typ. Max. Unit Test Condition
Optical output power Po - 30 - mW -
Threshold current Ith 30 40 50 mA Po=30mW
Operating current Iop 60 80 100 mA Po=30mW
Operating voltage Vop 2.0 2.2 2.7 V Po=30mW
Lasing wavelength ep 885 904 920 nm Po=30mW
Beam divergence 8 10 11 deg Po=30mW
Beam divergence 25 31 40 deg Po=30mW
Monitor current Im 100 300 500 uA Po=30mW
Astigmatism As - 11 - um Po=30mW
Slope Efficiency (mW/mA) 0.5 0.7 0.9 Po=30mW
MTTF 10000 hrs. Po=30mW
Emitter Size 10 x 60 Microns - Emitter Distance to Cap Lens = 0.3mm
Structure Index Guided
  • 15mm Module Housing Available:  14.8mm x 33.5mm - 3/8 - 56 Thread Size