3.3mm 840nm-5mW - Infrared Laser Diode

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INFRARED LASER DIODE DATA SHEET           ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)

TECHNICAL DATA
Infrared laser diode light output  840nm
Optical power output      5mW CW
Package Type            3.3mm
Built-in photo diode for monitoring laser output
Pin Out Diagram

Items

Symbols

Values

Unit
Optical output power

Po

5

mW
Laser diode reverse voltage

VLDR

2

V
Photo diode reverse voltage

VPDR

30

V
Operating temperature

Topr

-10 ~ +40

°C
Storage temperature

Tstg

-40 ~ +85

°C

OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)

Items

Symbols

Min.

Typ.

Max.

Unit

Test Condition
Optical output power

Po

-

5

-

mW

-
Threshold current

Ith

10

20

35

mA

-
Operating current

Iop

15

25

45

mA

Po=5mW
Operating voltage

Vop

2.0

2.4

2.7

V

Po=5mW
Lasing wavelength

8 D

830

840

850

nm

Po=5mW
Beam divergence

q F

8

10

11

deg

Po=5mW
Beam divergence

q z

25

31

40

deg

Po=5mW
Slope Efficiency (mW/mA)

0

0.4

0.5

0.7

-
Monitor current

Im

10

100

200

m A

Po=5mW,Vr=5V
Astigmatism

As

-

11

-

m m

Po=5mW
MTTF

3000-5,000 hrs.

Po=5mW,NA=0.4
Emitter Size -
Structure -