3.3mm 780nm-5mW - Infrared Laser Diode |
INFRARED LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)
|
|
Items |
Symbols |
Values |
Unit |
Optical output power |
Po |
5 |
mW |
Laser diode reverse voltage |
VLDR |
2 |
V |
Photo diode reverse voltage |
VPDR |
30 |
V |
Operating temperature |
Topr |
-10 ~ +40 |
°C |
Storage temperature |
Tstg |
-40 ~ +85 |
°C |
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)
Items |
Symbols |
Min. |
Typ. |
Max. |
Unit |
Test Condition |
Optical output power |
Po |
- |
5 |
- |
mW |
- |
Threshold current |
Ith |
15 |
25 |
40 |
mA |
- |
Operating current |
Iop |
25 |
35 |
50 |
mA |
P o=5mW |
Operating voltage |
Vop |
1.9 |
2.1 |
2.5 |
V |
P o=5mW |
Lasing wavelength |
8 D |
770 |
780 |
790 |
nm |
P o=5mW |
Beam divergence |
q F |
8 |
11 |
15 |
deg |
P o=5mW |
Beam divergence |
q z |
20 |
35 |
45 |
deg |
P o=5mW |
Slope Efficiency (mW/mA) |
0 |
0.1 |
0.3 |
0.6 |
- |
|
Monitor current |
Im |
100 |
200 |
600 |
m A |
P o=5mW,Vr=5V |
Astigmatism |
As |
- |
11 |
- |
m m |
P o=5mW |
MTTF | 3000-5,000 hrs. |
P o=5mW,NA=0.4 |
Emitter Size | - |
Structure | - |